There is no information in the literature about semiconductor lasers excited by nuclear radiation although the possibility for pumping them, for example, with reactor y-ray radiation, is discussed in article [35]. To pump semiconductor lasers,

electron beams are another type of ionizing radiation that is widely used. Numerous studies in this area have produced semiconductor lasers based on CdS, InSb, InAs, GaAs, etc. that radiate within a broad spectral range, 0.33-30 qm, and have very different operation modes: continuous-wave mode with excitation by a focused electron beam, a picosecond pulsed mode with a repetition frequency in the several tens of gigahertz, and a pulse-periodic mode with an average power in the tens of watts and intrinsic efficiency of ~10 % [36].

In addition to electron beams, semiconductor lasers were pumped using the bremsstrahlung of pulsed electron accelerators. In experiment [37], by pumping monocrystal CdS (A«500 nm) with the bremsstrahlung of a pulsed electron accelerator, 5 kW lasing was achieved with a pulse duration of about 20 ns.