Under the influence of reactor n, y-radiation on the photoreceivers, additional radiation currents arise, integral and spectral sensitivities are altered, the level of intrinsic noise increases, and the shape of the volt-amp characteristic is changed [40]. The degree of influence of reactor radiation depends first of all on the type of receiver and the absorbed dose rate. Some results for the radiation resistance of semiconductor photoreceivers are shown in study [44], while study [40] shows the results of measurements of radiation currents for certain types of semiconductor photoresistors and photodiodes, as well as photomultipliers and photocells.

In experiments with NPLs with pulsed reactors, various types of receivers are used, which make it possible to measure the energy, power, and the spectral and time characteristics of laser radiation. Some of them (thermal gauges of laser pulse

energy, photocells with an external photo effect) can be located at distances of 2­5 m from the core of the pulsed reactor with absorbed doses of 1-10 Gy (103­104 Gy/s), while others (photomultipliers and semiconductor photodiodes) are outside the boundaries of the reactor hall, where absorbed doses do not exceed ~0.01 Gy (~10 Gy/s). The possibility of using specific receivers to measure the characteristics of the NPLs must be tested in additional experiments.