Computational Defect Mechanics

In this section, we develop the basic ingredients of computational DD, following closely the parametric method. The key idea here is that dislocations are divided into segments of smooth parametric curves in three dimensions. Each segment has two nodes, one on each end of the segment. Forces are computed on the segments, and effectively calculated at the nodes. An equation of motion (EOM) is then derived for each node, and the whole system is assembled in a matrix form, very similar to the finite element method (FEM). The matrix system is solved with time increments by either explicit or implicit integra­tion methods. We will now go into some of the computational details.

1.16.2.1 Isotropic Crystals

When the Green’s functions are known, the elastic field of a dislocation loop can be constructed by a surface integration. The starting point in this

calculation is the displacement field in a crystal con­taining a dislocation loop, which can be expressed

 

Consider now the virtual motion of the disloca­tion loop. The mechanical power during the virtual motion is composed of two parts: (1) change in the elastic energy stored in the medium upon loop motion under the influence of its own stress (i. e., the change in the loop self-energy); (2) the work done on moving the loop as a result of the action of external and internal stresses, excluding the stress contribution ofthe loop itself. These two components constitute the work of Peach-Koehler.27 The main idea of DD is to derive approximate equations of motion from the principle of virtual power dissipa­tion of the second law of thermodynamics,15 by finding virtual Peach-Koehler forces that would result in the simultaneous displacement of all dislo­cation loops in the crystal. A major simplification is that this many-body problem is reduced to the single loop problem. In this simplification, instead of moving all the loops simultaneously, they are moved sequentially, with the motion of each one against the collective field of all other loops. The approach is reminiscent of the single-electron simplification of the many-electron problem in quantum mechanics.

If the material is assumed to be elastically isotro­pic and infinite, a great reduction in the level of required computations ensues. First, surface integrals can be replaced by line integrals along the disloca­tion. Second, Green’s functions and their derivatives have analytical solutions. Thus, the starting point in most DD simulations so far is a description of the elastic field of dislocation loops of arbitrary shapes by line integrals of the form proposed in de Wit26 as

 

image965

dk [2]

 

image966

where m and n are the shear modulus and Poisson’s ratio, respectively, b is the Burgers vector with Car­tesian components b,, and the vector potential Ak(R) = EijkX, Sj/[R(R T R • s)] satisfies the differen­tial equation CpikA^p(R) = XjRT3, where s is an arbi­trary unit vector. The radius vector R connects a source point on the loop to a field point, as shown in Figure 1, with Cartesian components R,, succes­sive partial derivatives R, jk. .., and magnitude R. The line integrals are carried out along a closed contour C defining the dislocation loop of differential arc length dl of components dlk.

 

image967

41 nEkmn(R, ijm dijR, ppm)

 

[3]

 

image968

segments. Reproduced from Ghoniem, N. M.; Huang, J.; Wang, Z. Philos. Mag. Lett. 2001, 82(2), 55-63.

 

where m and n are the shear modulus and Poisson’s ratio, respectively. The line integral is discretized, and the stress field of dislocation ensembles is obtained by a summation process over line segments, as shown in Figure 1.

Once the parametric curve for the dislocation segment is mapped onto the scalar interval {o 2 [0,1]}, the stress field everywhere is obtained as a fast numerical quadrature sum.13 The Peach-Koehler force exerted on any other dislocation segment can be obtained from the total stress field (external and internal) at the segment as27

FPK = s • b x t [4]

 

Подпись: CTCds Г Подпись:Подпись: К = F dt * Подпись: x')vk d/(x0)Подпись: Gip,q (x LПодпись: [10]Подпись: 1 8я2r2

The total self-energy of the dislocation loop is deter­mined by double line integrals. However, Gavazza and Barnett28 have shown that the first variation in the self-energy of the loop can be written as a single line integral, and that the majority ofthe contribution is governed by the local line curvature. Based on these methods for evaluation of the interaction and self-forces, the weak variational form of the govern­ing EOM of a single dislocation loop was developed by Ghoniem et al.14 as

(Ft — BakVa)drkds = 0 [5]

г

Here, Fk are the components of the resultant force, consisting of the Peach-Koehler force FPK (generated by the sum of the external and internal stress fields), the self-force Fs, and the osmotic force Fo (in case climb is also considered14). The resistivity matrix (inverse mobility) is Bak, Va are the velocity vector components, and the line integral is carried out along the arc length of the dislocation ds. To simplify the problem, let us define the following dimensionless parameters:

r.= £ f*= £ t-=m

a ma B

Here, a is lattice constant, m the shear modulus, and t is time. Hence eqn [5] can be rewritten in dimen­sionless matrix form as

r — 8r*T(f*- d?)dS- = 0 [6]

Here, f — = fi-,/2*,f-]T and r — = [r-, r*, r-]T, are all dependent on the dimensionless time t*. Following Ghoniem et a/.,14 a closed dislocation loop can be divided into Ns segments. In each segment j, we can choose a set of generalized coordinates qm at the two ends, thus allowing parameterization of the form

r- = CQ [7]

Here, C = [Ci(ffl), C2(m),, Cm(m)], Cj(m), (i = 1, 2,…,m) are shape functions dependent on the param­eter (0 < m < 1), and Q = [q1, q2,…, qm]T, with q2 a set of generalized coordinates. Substituting eqn [7] into eqn [6], we obtain

image976

0 [8]

Let,

CTf-ds, ky

г

Following a similar procedure to the FEM, we assem­ble the EOM for all contiguous segments in global matrices and vectors, as

Ns N,

F = fj, К = k

j=i Z=i

Then, from eqn [8] we get

,dQ