The interest in SiC as a large band gap semiconduc­tor for electronic applications has promoted works on typical dopants. Most of the calculations focus on hexagonal SiC, but one can reasonably assume that

the results would not be very different in cubic SiC. One can find calculations dealing with boron12 ’ as an acceptor and nitrogen131’132 or phosphorus133 as a donor. Other impurities were studied: transition metals,134-136 oxygen,137 important for the behavior of the SiO2/SiC interface, hydrogen,138-140 rare gases,141 and palladium.142 A systematic study of substitutional impurities has recently appeared,143 which focuses on the trends of carbon vs. silicon substitution according to the position of species in the periodic table.