Как выбрать гостиницу для кошек
14 декабря, 2021
As discussed in Chapter 1.01, Fundamental Properties of Defects in Metals; Chapter 1.02, Fundamental Point Defect Properties in Ceramics; and Chapter
1.11, Primary Radiation Damage Formation, the
international standardized displacement per atom (dpa) unit for radiation damage34 is a useful parameter for comparing displacement damage levels in a variety of irradiation environments. The calculated damage level is directly proportional to the product of the fluence and the average kinetic energy transferred to the host lattice atoms (damage energy). The effective damage cross-sections for 1 MeV particles incident on copper range from ^30 barns (1 barn = 1 x 10-24 cm2) for electrons35 to ^600 barns for neutrons36 and ~2 x 109 barns for Cu ions.37
The dpa unit is remarkably effective in correlating the initial damage production levels over a wide range of materials and irradiating particles and is the singular most important parameter for quantifying radiation effects in materials. Numerous aspects of microstructural evolution are qualitatively equivalent on a dpa basis for materials irradiated in widely different irradiation environments. However, the dpa unit does not accurately capture some of the complex differences in primary damage production for energetic displacement cascade conditions compared to isolated Frenkel pair production.38 For example, defect production at cryogenic temperatures (where long-range defect migration and annihilation does not occur) for neutron and heavy ion-irradiated materials is about 20-30% of the calculated dpa value due to athermal in-cascade recombination processes.38,39 In addition, the accumulated damage, as evident in the form of point defect clusters or other microstructural features, typically exhibits a complex nonlinear relationship with irradiation dose that depends on irradiation temperature and several other factors. The impact of other experimental variables on the dose- dependent damage accumulation behavior is discussed in Sections 1.03.3.2—1.03.3.9.