In the course of experiments, it has been obtained that the pressure of desorbed hydrogen molecules is approximately by 21 times as much as the calculated pressure of moist air being supplied through the microleak.

So a multiplicative effect [6,7] is realised on the semiconductor surface of the superinsulation. It should be noted that similar multiplicative phenomena have been observed
in the work [41] where the argon desorption stimulation has been investigated by means of the addition of oxygen. The relative enhancement of the desorption in the presence of oxygen has been increased approximately by 20 times as compared with pure argon crystals.