1.02.6.1 Diffusion Mechanisms
Diffusion in ceramic materials is a process enabled by defects and controlled by their concentrations. Owing to the existence of separate sublattices, cation and anion diffusion is restricted to taking place separately (i. e., without exchange of anions and cations), which is one of the main differences with respect to diffusion in other materials.22 Therefore, mechanistically, diffusion theory is applied in ceramics by considering the anion and cation sublattices separately. Interestingly, it has recently been suggested23 that where there is more than one cation sublattice, cations can move on an alternate sublattice through the formation of cation antisite defects. Finally, it can be the case that ion transport in one of the sublattices is more pronounced. For example, in oxygen fast ion conductors, oxygen self-diffusion is faster than cation diffusion by orders of magnitude.24-26
Transport in crystalline materials requires the motion of atoms away from their equilibrium positions and, therefore, the role of point defects is significant.22 For example, vacancies provide the space into which neighboring atoms in the lattice can jump,27-29 although it is often the interstitial defects that provide the transport mechanism.22
Diffusion mechanisms refer to the way an atom can move from one position in the lattice to another, generally through an activated process that sees the ion move over an energy barrier. The beginning and end points to each jump may be symmetrically identical, providing a contiguous pathway through the crystal, but this need not be so. In some cases, the contiguous migration pathway may involve a number of nonidentical steps. Nevertheless, in most materials, the motion of an atom is restricted to a few paths.
There are three main mechanisms that are relevant to most ceramic systems: the interstitial, the vacancy, and the interstitialcy mechanism. However, for completeness, we will also briefly describe the
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collective and the interstitial-substitutional exchange mechanisms, which may be encountered in other classes of materials.22
In the interstitial mechanism, atoms at interstitial sites initially migrate by jumping from one interstitial site to a neighboring one (Figure 19). At the completion of a single jump, there is no permanent displacement of the other ions, although, of course, in the process of diffusion, the extent of lattice relaxation is likely to have become greater to facilitate the saddle point configuration. In principle, it is a simple mechanism as it does not require the existence of defects other than the interstitial ion, although it is possible that transient defects are produced if the lattice relaxation is great enough in the course of the jump. Interstitial diffusion is not common in ceramic materials but does occur if the interstitial species is small.
In the vacancy mechanism, a host or substitutional impurity atom diffuses by jumping to a neighboring vacancy (Figure 20). Vacancy-mediated diffusion is common in a number of systems (particularly ceramics with higher atomic density where interstitial defect energies are high). For example, the vacancy mechanism is important for the diffusion of substitutional impurities, for self-diffusion and the transport of я-type dopants in germanium,30,31 and for oxygen self-diffusion in a number of hypostoichiometric perovskite and fluorite-related systems.32 In the vacancy mechanism, the interaction, attractive or repulsive, between the species that undergo transport and the vacancy can be very important. Of course, the vacancy mechanism requires the presence of lattice vacancies and therefore, their concentration in the lattice will influence the kinetics.23
In the interstitialcy mechanism, an interstitial atom displaces an atom from its normal substitutional site (Figure 21). The displaced atom, in turn, moves
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Figure 19 The interstitial mechanism of diffusion. The red and blue atoms are lattice species.
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Figure 20 The vacancy mechanism of diffusion. The red and blue ions are lattice species.
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Figure 21 The interstitialcy mechanism of diffusion. The red and blue ions are lattice species, the blue ion with the red perimeter is initially an interstitial species but becomes a lattice species.
to an interstitial site. This mechanism is important for the diffusion of dopants such as boron in silicon.33 In hyperstoichiometric oxides, such as La2NiO4+d, it was recently predicted that oxygen diffuses predominantly via an interstitialcy mechanism.26
Collective mechanisms involve the simultaneous transport of a number of atoms. They can be found in ion-conducting oxide glasses22 and have been predicted during the annealing of radiation damage.34 Finally, in the interstitial-substitutional exchange mechanism, the impurities can occupy both substitutional and interstitial sites.22 One possibility for the interstitial atom is to migrate in the lattice until it encounters a vacant site, which it then occupies to become a substitutional impurity (dissociative mechanism).22 Another possibility for the impurity interstitial atom is to migrate in the lattice until it displaces an atom from its normal crystallographic site, thus forming a substitutional impurity and a host interstitial atom (kick-out mechanism). The interstitial-substitutional mechanism has been encountered in zinc diffusion in silicon and gallium arsenide.[6]
Naturally, there are potential energy barriers hindering the motion of atoms in the lattice. The activation energy associated with the barriers may be overcome by providing thermal energy to the system. The jump frequency o of a defect is given by[7]
f AGm
o =n exp( ~w
where DGm is the free energy required to transport the defect from an initial equilibrium position to a saddle point and n is the vibrational frequency. In real materials, the atomic transport may be locally affected by interactions with other defects especially if the defect concentration is high.35-37