Как выбрать гостиницу для кошек
14 декабря, 2021
During the migration of a point defect through the crystal lattice, it traverses an energy landscape that is schematically shown in Figure 18. The energy minima are the stable configurations where the defect energy is equal to Ef(r), the formation energy, but modified by the interactions with internal and external strain fields, which in general vary with the defect location r. In order to move to the adjacent energy minimum, the defect has to be thermally activated over the saddle point that has an energy
ES(r)=Ef (r)+Em(r) [69]
where Em(r) is the migration energy. As the properties of the point defect, such as its dipole tensor and its diaelastic polarizability, are not necessarily the same in the saddle point configurations as in the stable configuration, the interactions with the strain fields are different, and the envelope of the saddle point energies follows a different curve than the envelope of the stable configuration energies, as indicated in Figure 18. For a self-interstitial, we
Figure 18 Schematic of the potential energy profile for a migrating defect. |
must also consider the different orientations that it may have in its stable configuration. Accordingly, let Cm(r, t) be the concentration of point defects at the location r and at time t with an orientation m. For instance, the point defect could be the selfinterstitial in an fcc crystal, in which case, there are three possible orientations for the dumbbell axis and m may assume the three values 1, 2, or 3 if the axis is aligned in the xb x2, or x3 direction, respectively. The elementary process of diffusion consists now of a single jump to one adjacent site at r + R, where R is one of the possible jump vectors.
The rate of change with time of the concentration Cm (r, t) is now given by
—C
= Cn(r — R, t)Lnm(r — R | R)
r, v
‘У ‘ Cm(r, t)Lmn(r 1 R) [70]
r, v
Here, the first term sums up all jumps from neighboring sites to site r thereby leading to an increase of Cm (r, t), while the second term adds up all the jumps (really the probabilities of jumps) out of the site r. The frequency (or better the probability) of a particular jump from r to r + R while changing the orientation from m to V is denoted by Lmn(r | R). The eqn [70] applies now to each of the possible orientations, and it appears that this leads to as many diffusion equations as there are possible orientations, and these equations may be coupled if the defect can change its orientation between jumps.
To circumvent this complication, one considers an ensemble of identical systems, all having identical microstructures, and identical internal and external stress fields. The ensemble average of the defect concentration at each site, denoted simply as C(r, t) without a subscript, is now assumed to be the thermodynamic average such that exp(-bEm)
£exp(-bEvf)
= C(r, 0exp(-b4)/N(r)
where the normalization factor N only depends on the location r as do the energies for the stable defect configurations.
Substituting this into eqn [70] on both sides constitutes another assumption. To see this, suppose that the defect concentrations CV(r — R, t) on all neighbor sites happen, at the particular instance t, to be aligned in one direction. Since their new
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